Invention Grant
US09373542B2 Integrated circuits and methods for fabricating integrated circuits with improved contact structures
有权
用于制造具有改进的接触结构的集成电路的集成电路和方法
- Patent Title: Integrated circuits and methods for fabricating integrated circuits with improved contact structures
- Patent Title (中): 用于制造具有改进的接触结构的集成电路的集成电路和方法
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Application No.: US14081749Application Date: 2013-11-15
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Publication No.: US09373542B2Publication Date: 2016-06-21
- Inventor: Xunyuan Zhang , Xiuyu Cai , Hoon Kim
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/485 ; H01L23/532 ; H01L21/285
Abstract:
Integrated circuits with improved contact structures and methods for fabricating integrated circuits with improved contact structures are provided. In an exemplary embodiment, a method for fabricating integrated circuits includes providing a device in and/or on a semiconductor substrate. Further, the method includes forming a contact structure in electrical contact with the device. The contact structure includes silicate barrier portions overlying the device, a barrier metal overlying the device and positioned between the silicate barrier portions, and a fill metal overlying the barrier metal and positioned between the silicate barrier portions.
Public/Granted literature
- US20150137373A1 INTEGRATED CIRCUITS AND METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH IMPROVED CONTACT STRUCTURES Public/Granted day:2015-05-21
Information query
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