发明授权
US09373583B2 High quality factor filter implemented in wafer level packaging (WLP) integrated device
有权
高品质因子滤波器在晶圆级封装(WLP)集成器件中实现
- 专利标题: High quality factor filter implemented in wafer level packaging (WLP) integrated device
- 专利标题(中): 高品质因子滤波器在晶圆级封装(WLP)集成器件中实现
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申请号: US14323907申请日: 2014-07-03
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公开(公告)号: US09373583B2公开(公告)日: 2016-06-21
- 发明人: Jong-Hoon Lee , Young Kyu Song , Jung Ho Yoon , Uei Ming Jow , Xiaonan Zhang , Ryan David Lane
- 申请人: QUALCOMM Incorporated
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 代理机构: Loza & Loza, LLP
- 主分类号: H01L27/08
- IPC分类号: H01L27/08 ; H01L23/522 ; H01L49/02 ; H01L23/64 ; H01L25/065 ; H01L25/07 ; H01L25/11 ; H01L23/00 ; H01L25/03 ; H01L23/525
摘要:
Some implementations provide an integrated device that includes a capacitor and an inductor. The inductor is electrically coupled to the capacitor. The inductor and the capacitor are configured to operate as a filter for an electrical signal in the integrated device. The inductor includes a first metal layer of a printed circuit board (PCB), a set of solder balls coupled to the PCB, and a second metal layer in a die. In some implementations, the capacitor is located in the die. In some implementations, the capacitor is a surface mounted passive device on the PCB. In some implementations, the first metal layer is a trace on the PCB. In some implementations, the inductor includes a third metal layer in the die. In some implementations, the second metal layer is an under bump metallization (UBM) layer of the die, and the third metal is a redistribution layer of the die.
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