Invention Grant
- Patent Title: Under bump metallization
- Patent Title (中): 凸块下金属化
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Application No.: US14179688Application Date: 2014-02-13
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Publication No.: US09373594B2Publication Date: 2016-06-21
- Inventor: Chih-Fei Lee , Fu-Cheng Chang , Chi-Cherng Jeng , Hsin-Chi Chen , Yuan-Ko Hwang
- Applicant: Taiwan Semiconductor Manufacturing CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00
Abstract:
A structure of an under bump metallization and a method of forming the same are provided. The under bump metallization has a redistribution via hole, viewed from the top, in a round shape or a polygon shape having an angle between adjacent edges greater than 90°. Therefore, the step coverage of the later formed metal layer can be improved.
Public/Granted literature
- US20150228593A1 Under Bump Metallization Public/Granted day:2015-08-13
Information query
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