Image sensor and method of manufacturing the same are provided. The image sensor includes a semiconductor substrate including a pixel area, a voltage connection area, and a pad area, a plurality of photoelectric conversion devices in the pixel area, an anti-reflective layer on a back side of the semiconductor substrate and on the plurality of photoelectric conversion devices, a device isolation structure between the plurality of photoelectric conversion devices, at least one voltage connection structure in the voltage connection area, and electrically connected to the device isolation structure, at least one voltage applying device electrically connected to the at least one voltage connection structure, an internal circuit including at least one conductive inner wire and at least one conductive inner via in an insulating layer, and a through via structure in the pad area.