发明授权
US09373663B2 Landing pad in peripheral circuit for magnetic random access memory (MRAM)
有权
用于磁随机存取存储器（MRAM）的外围电路中的着陆垫
- 专利标题： Landing pad in peripheral circuit for magnetic random access memory (MRAM)
- 专利标题（中）： 用于磁随机存取存储器（MRAM）的外围电路中的着陆垫
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申请号： US14033374申请日： 2013-09-20
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公开(公告)号： US09373663B2公开(公告)日： 2016-06-21
- 发明人: Kimihiro Satoh , Yiming Huai
- 申请人： Avalanche Technology Inc.
- 申请人地址： US CA Fremont
- 专利权人： Avalanche Technology, Inc.
- 当前专利权人： Avalanche Technology, Inc.
- 当前专利权人地址： US CA Fremont
- 代理商 Bing K. Yen
- 主分类号： H01L27/112
- IPC分类号： H01L27/112 ; H01L27/22
摘要：
The present invention is directed to a memory device having a via landing pad in the peripheral circuit that minimizes the memory cell size. A device having features of the present invention comprises a peripheral circuit region and a magnetic memory cell region including at least a magnetic tunnel junction (MTJ) element. The peripheral circuit region comprises a substrate and a bottom contact formed therein; a landing pad including a first magnetic layer structure formed on top of the bottom contact and a second magnetic layer structure separated from the first magnetic layer structure by an insulating tunnel junction layer, wherein each of the insulating tunnel junction layer and the second magnetic layer structure has an opening aligned to each other; and a via partly embedded in the landing pad and directly coupled to the first magnetic layer structure through the openings.
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