发明授权
- 专利标题： Normally-off high electron mobility transistors
- 专利标题（中）： 常关高电子迁移率晶体管
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申请号： US13100343申请日： 2011-05-04
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公开(公告)号： US09373688B2公开(公告)日： 2016-06-21
- 发明人: Gilberto Curatola , Oliver Häberlen , Gianmauro Pozzovivo
- 申请人： Gilberto Curatola , Oliver Häberlen , Gianmauro Pozzovivo
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/66 ; H01L29/423 ; H01L29/43 ; H01L29/20
摘要：
A normally-off transistor includes a first region of III-V semiconductor material, a second region of III-V semiconductor material on the first region, a third region of III-V semiconductor material on the second region and a gate electrode adjacent at least one sidewall of the third region. The first region provides a channel of the transistor. The second region has a band gap greater than the band gap of the first region and causes a 2-D electron gas (2DEG) in the channel. The second region is interposed between the first region and the third region. The third region provides a gate of the transistor and has a thickness sufficient to deplete the 2DEG in the channel so that the transistor has a positive threshold voltage.
公开/授权文献
- US20120280278A1 Normally-Off High Electron Mobility Transistors 公开/授权日：2012-11-08
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