- 专利标题： Silicon heterojunction photovoltaic device with wide band gap emitter
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申请号： US14662597申请日： 2015-03-19
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公开(公告)号： US09373743B2公开(公告)日： 2016-06-21
- 发明人: Bahman Hekmatshoar-Tabari , Ali Khakifirooz , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Muphy & Presser, P.C.
- 代理商 Louis J. Percello, Esq.
- 主分类号： H01L31/18
- IPC分类号： H01L31/18 ; H01L31/0336 ; H01L31/074 ; H01L31/0304 ; H01L31/072 ; H01L31/036 ; H01L31/0236
摘要：
A photovoltaic device including a single junction solar cell provided by an absorption layer of a type IV semiconductor material having a first conductivity, and an emitter layer of a type III-V semiconductor material having a second conductivity, wherein the type III-V semiconductor material has a thickness that is no greater than 50 nm.
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