发明授权
US09373780B2 Co/X and CoX multilayers with improved out-of-plane anisotropy for magnetic device applications
有权
Co / X和CoX多层膜，具有改进的磁性器件应用的面外各向异性
- 专利标题： Co/X and CoX multilayers with improved out-of-plane anisotropy for magnetic device applications
- 专利标题（中）： Co / X和CoX多层膜，具有改进的磁性器件应用的面外各向异性
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申请号： US13955035申请日： 2013-07-31
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公开(公告)号： US09373780B2公开(公告)日： 2016-06-21
- 发明人: Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
- 申请人： Headway Technologies, Inc.
- 申请人地址： US CA Milpitas
- 专利权人： Headway Technologies, Inc.
- 当前专利权人： Headway Technologies, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理机构： Saile Ackerman LLC
- 代理商 Stephen B. Ackerman
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L43/12 ; H01L43/08 ; H01L43/10 ; H01L43/02 ; G11C11/16 ; H01F10/30 ; H01L29/66 ; H01F10/32 ; H01F41/30
摘要：
A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
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