发明授权
- 专利标题: Photonic device structure and fabrication method thereof
- 专利标题(中): 光子器件结构及其制造方法
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申请号: US14705188申请日: 2015-05-06
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公开(公告)号: US09373938B2公开(公告)日: 2016-06-21
- 发明人: Mengyuan Huang , Pengfei Cai , Liangbo Wang , Su Li , Wang Chen , Ching-yin Hong , Dong Pan
- 申请人: SiFotonics Technologies Co., Ltd.
- 申请人地址: US MA Woburn
- 专利权人: SIFOTONICS TECHNOLOGIES CO., LTD.
- 当前专利权人: SIFOTONICS TECHNOLOGIES CO., LTD.
- 当前专利权人地址: US MA Woburn
- 代理机构: Han IP Corporation
- 代理商 Andy M. Han
- 主分类号: H01S5/00
- IPC分类号: H01S5/00 ; H01S5/20 ; H01S5/02 ; H01S5/30 ; H01L31/0352 ; H01L31/105 ; H01S5/183 ; H01S5/22
摘要:
Various embodiments of a photonic device and fabrication method thereof are described herein. A device may include a substrate, a bottom contact layer, a current confinement layer, an intrinsic layer, an absorption layer, and a top contact layer. The bottom contact layer may be of a first polarity and may be disposed on the substrate. The current confinement layer may be disposed on the bottom contact layer. The intrinsic layer may be disposed on the current confinement layer. The absorption layer may be disposed on the intrinsic layer. The top contact layer may be of a second polarity and may be disposed on the absorption layer. The second polarity is opposite to the first polarity.