Invention Grant
- Patent Title: Post fabrication tuning of an integrated circuit
- Patent Title (中): 集成电路的后制造调谐
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Application No.: US14268336Application Date: 2014-05-02
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Publication No.: US09374072B2Publication Date: 2016-06-21
- Inventor: Betina Hold , Brian Cline , George Lattimore
- Applicant: ARM Limited
- Applicant Address: GB Cambridge
- Assignee: ARM Limited
- Current Assignee: ARM Limited
- Current Assignee Address: GB Cambridge
- Agency: Pramudji Law Group PLLC
- Agent Ari Pramudji
- Main IPC: H03K5/133
- IPC: H03K5/133 ; H03K5/13

Abstract:
An integrated circuit 2 includes a transistor 26 which has a normal switching speed arising during normal operations of that transistor that apply electrical signals within normal ranges. If it is desired to change the speed of operation of the transistor, then speed tuning circuitry 12 applies a tuning electrical signal with a tuning characteristic outside of the normal range of characteristics to the transistor concerned. The tuning electrical signal induces a change in at least one of the physical properties of that transistor such that when it resumes its modified normal operations the switching speed of that transistor will have changed. The tuning electrical signal may be a voltage (or current) outside of the normal range of voltages applied to the gate of a transistor so as to induce a permanent increase in the threshold of that transistor and so slow its speed of switching. Temperature of a transistor may also be controlled to induce a permanent change in performance/speed.
Public/Granted literature
- US20140312956A1 POST FABRICATION TUNING OF AN INTEGRATED CIRCUIT Public/Granted day:2014-10-23
Information query
IPC分类: