Invention Grant
- Patent Title: Image sensor with embedded infrared filter layer
- Patent Title (中): 图像传感器带有嵌入式红外滤光片层
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Application No.: US14486803Application Date: 2014-09-15
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Publication No.: US09374538B2Publication Date: 2016-06-21
- Inventor: Keng-Yu Chou , Kazuaki Hashimoto , Jen-Cheng Liu , Jhy-Jyi Sze , Wei-Chieh Chiang , Pao-Tung Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H04N5/33
- IPC: H04N5/33 ; H04N5/335 ; G02B1/11 ; H04N9/04

Abstract:
An image sensor includes a substrate, photosensitive devices, a color filter layer, a micro-lens layer and an infrared filter layer. The photosensitive devices are disposed in the substrate. The color filter layer is disposed to cover the photosensitive devices. The micro-lens layer is disposed on the color filter layer. The infrared filter layer directly covers the micro-lens layer.
Public/Granted literature
- US20160080669A1 IMAGE SENSOR WITH EMBEDDED INFRARED FILTER LAYER Public/Granted day:2016-03-17
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