Invention Grant
- Patent Title: System and method to regulate operating voltage of a memory array
- Patent Title (中): 调节存储器阵列工作电压的系统和方法
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Application No.: US13842263Application Date: 2013-03-15
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Publication No.: US09378803B2Publication Date: 2016-06-28
- Inventor: Stanley Seungchul Song , Zhongze Wang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G11C11/4074 ; G11C5/14 ; G11C7/04 ; G11C11/413 ; G11C11/417

Abstract:
A method includes measuring a temperature of a sensor associated with a memory array. The method also includes calculating, at a voltage regulating device, an operating voltage based on the temperature and based on fabrication data associated with the memory array. The method further includes regulating, at the voltage regulating device, a voltage provided to the memory array based on the operating voltage.
Public/Granted literature
- US20140269020A1 SYSTEM AND METHOD TO REGULATE OPERATING VOLTAGE OF A MEMORY ARRAY Public/Granted day:2014-09-18
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