Invention Grant
- Patent Title: Integrated circuit devices having through silicon via structures and methods of manufacturing the same
- Patent Title (中): 具有硅通孔结构的集成电路器件及其制造方法
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Application No.: US14504647Application Date: 2014-10-02
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Publication No.: US09379042B2Publication Date: 2016-06-28
- Inventor: Jae-Hwa Park , Suk-Chul Bang , Byung-Lyul Park , Kwang-Jin Moon
- Applicant: Jae-Hwa Park , Suk-Chul Bang , Byung-Lyul Park , Kwang-Jin Moon
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel & Sibley, P.A.
- Priority: KR10-2013-0122955 20131015
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L23/48 ; H01L49/02 ; H01L21/768 ; H01L27/108 ; H01L23/522 ; H01L23/538
Abstract:
An integrated circuit device is provided. The integrated circuit device includes: a capacitor including an electrode formed in a first area on a substrate; a through-silicon-via (TSV) landing pad formed in a second area on the substrate, the TSV landing pad including the same material as the electrode; a multi-layered interconnection structure formed on the capacitor and the TSV landing pad; and a TSV structure passing through the substrate, the TSV structure being connected to the multi-layered interconnection structure through the TSV landing pad.
Public/Granted literature
- US20150108605A1 Integrated Circuit Devices Having Through Silicon Via Structures and Methods of Manufacturing the Same Public/Granted day:2015-04-23
Information query
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