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Invention Grant
US09379106B2 Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels 有权
具有3D通道的半导体器件，以及制造具有3D通道的半导体器件的方法

Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels
Abstract:
A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film, and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.
Abstract(Chinese):

一种半导体器件包括：衬底，包括沿第一方向排列的第一至第三鳍片，布置在第一鳍片和第二鳍片之间的第一沟槽，以及布置在第二鳍片和第三鳍片之间的第二沟槽。 半导体器件还包括布置在第一沟槽中的第一场绝缘膜，形成在第二沟槽中的第二场绝缘膜，布置在第一场绝缘膜上的第一虚栅极，以及至少部分地布置在第二沟槽上的第二虚栅极 第二场绝缘膜。 第二场绝缘膜的下表面被布置成低于第一场绝缘膜的下表面。

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