Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13732353Application Date: 2012-12-31
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Publication No.: US09379114B2Publication Date: 2016-06-28
- Inventor: Jin-Won Jeong , Wonchul Lee
- Applicant: Jin-Won Jeong , Wonchul Lee
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2012-0032925 20120330
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L27/105
Abstract:
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include storage node pads disposed adjacent to each other between word lines but spaced apart from each other by an isolation pattern. Accordingly, it is possible to prevent a bridge problem from being caused by a mask misalignment. This enables to improve reliability of the semiconductor device.
Public/Granted literature
- US20130256769A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2013-10-03
Information query
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