发明授权
US09379254B2 Amorphous oxide semiconductor thin film transistor fabrication method
有权
无定形氧化物半导体薄膜晶体管制造方法
- 专利标题： Amorphous oxide semiconductor thin film transistor fabrication method
- 专利标题（中）： 无定形氧化物半导体薄膜晶体管制造方法
-
申请号： US13299780申请日： 2011-11-18
-
公开(公告)号： US09379254B2公开(公告)日： 2016-06-28
- 发明人: Cheonhong Kim , Tallis Young Chang , John Hyunchul Hong
- 申请人： Cheonhong Kim , Tallis Young Chang , John Hyunchul Hong
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM MEMS TECHNOLOGIES, INC.
- 当前专利权人： QUALCOMM MEMS TECHNOLOGIES, INC.
- 当前专利权人地址： US CA San Diego
- 代理机构： Weaver Austin Villeneuve & Sampson LLP
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/786 ; H01L29/66
摘要：
This disclosure provides systems, methods and apparatus for fabricating thin film transistor (TFT) devices. In one aspect, a substrate having a source area, a drain area, and a channel area is provided. Metal cations are implanted in the oxide semiconductor layer overlying the source area and the drain area of the substrate. The metal cation implantation forms a doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source area and the drain area of the substrate.
公开/授权文献
信息查询
IPC分类:
