A charge pump includes a voltage multiplier core and a clocking circuit. The voltage multiplier core includes first and second cross-coupled CMOS devices, first and second output CMOS devices, a first capacitive node coupled between the first cross-coupled CMOS device and the first output CMOS device, and a second capacitive node coupled between the second cross-couple CMOS device and the second output CMOS device. The clocking circuit configured to control the first and second output CMOS devices to inhibit a drop in respective output voltages there from, while simultaneously controlling the first and second cross-coupled CMOS device and input voltages applied to the first and second capacitive nodes to minimize leakage from the first and second capacitive nodes.