Invention Grant
- Patent Title: Vapor deposition of LiF thin films
- Patent Title (中): LiF薄膜的蒸镀
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Application No.: US13802382Application Date: 2013-03-13
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Publication No.: US09382615B2Publication Date: 2016-07-05
- Inventor: Miia Mäntymäki , Jani Hämäläinen , Mikko Ritala , Markku Leskelä
- Applicant: ASM IP HOLDING B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP HOLDING B.V.
- Current Assignee: ASM IP HOLDING B.V.
- Current Assignee Address: NL Almere
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: C23C16/08
- IPC: C23C16/08 ; C23C16/30 ; C23C16/455
Abstract:
A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.
Public/Granted literature
- US20140106070A1 VAPOR DEPOSITION OF LiF THIN FILMS Public/Granted day:2014-04-17
Information query
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