Invention Grant
US09384860B2 Semiconductor memory of which defective cell is replaceable with redundant cell and manufacturing method of semiconductor memory
有权
有缺陷的单元的半导体存储器可以用冗余单元替代并且半导体存储器的制造方法
- Patent Title: Semiconductor memory of which defective cell is replaceable with redundant cell and manufacturing method of semiconductor memory
- Patent Title (中): 有缺陷的单元的半导体存储器可以用冗余单元替代并且半导体存储器的制造方法
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Application No.: US14331401Application Date: 2014-07-15
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Publication No.: US09384860B2Publication Date: 2016-07-05
- Inventor: Yoshinori Tomita , Hidetoshi Matsuoka , Hiroyuki Higuchi
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Staas & Halsey LLP
- Priority: JP2010-279718 20101215
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C29/00 ; H01L21/66
Abstract:
A semiconductor memory includes a memory cell array that includes data cells of x bits and redundant cells of y bits for each word; a position-data storage unit that stores, for each word, defective-cell position data of defective cells of the data cells and the redundant cells; and a read circuit that reads data from cells of x bits based on the defective-cell position data stored in the position-data storage unit for a specified word of which address is specified as read address, the cells of x bits being formed by the data cells of x bits and the redundant cells of y bits of the specified word other than the defective cells.
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