发明授权
- 专利标题： Semiconductor structure and method of forming the same
- 专利标题（中）： 半导体结构及其形成方法
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申请号： US14017001申请日： 2013-09-03
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公开(公告)号： US09384984B2公开(公告)日： 2016-07-05
- 发明人: Chun-Hsien Lin , Min-Hsien Chen
- 申请人： United Microelectronics Corp.
- 申请人地址： TW Hsinchu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Hsinchu
- 代理机构： J.C. Patents
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L21/28 ; H01L29/49 ; H01L29/66 ; H01L21/8238 ; H01L29/51 ; H01L29/165
摘要：
A method of forming a semiconductor device is disclosed. A substrate having a dielectric layer thereon is provided. The dielectric layer has a gate trench therein and a gate dielectric layer is formed on a bottom of the gate trench. A work function metal layer and a top barrier layer are sequentially formed in the gate trench. A treatment is performed to the top barrier layer so as to form a silicon-containing top barrier layer. A low-resistivity metal layer is formed in the gate trench.
公开/授权文献
- US20150061041A1 SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME 公开/授权日：2015-03-05
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