Invention Grant
US09385003B1 Residue free systems and methods for isotropically etching silicon in tight spaces
有权
用于在狭窄空间中各向同性蚀刻硅的无残留系统和方法
- Patent Title: Residue free systems and methods for isotropically etching silicon in tight spaces
- Patent Title (中): 用于在狭窄空间中各向同性蚀刻硅的无残留系统和方法
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Application No.: US14623144Application Date: 2015-02-16
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Publication No.: US09385003B1Publication Date: 2016-07-05
- Inventor: Ming-Shu Kuo , Qinghua Zhong , Helene Del Puppo , Ganesh Upadhyaya , Gowri Kamarthy
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: LAM RESEARCH CORPORATION
- Current Assignee: LAM RESEARCH CORPORATION
- Current Assignee Address: US CA Fremont
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/3213 ; H01J37/32 ; H01L21/3205
Abstract:
Systems and methods for etching a substrate include arranging a substrate including a first structure and a dummy structure in a processing chamber. The first structure is made of a material selected from a group consisting of silicon dioxide and silicon nitride. The dummy structure is made of silicon. Carrier gas is supplied to the processing chamber. Nitrogen trifluoride and molecular hydrogen gas are supplied to the processing chamber. Plasma is generated in the processing chamber. The dummy structure is etched.
Information query
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