发明授权
- 专利标题： Method of manufacturing a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
-
申请号： US14183870申请日： 2014-02-19
-
公开(公告)号： US09385040B2公开(公告)日： 2016-07-05
- 发明人: Tsai-Tsung Tsai , Wen-Hsiung Lu , Yu-Peng Tsai , Wei-Hung Lin , Ming-Da Cheng , Chung-Shi Liu
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址： TW Hsinchu
- 代理商 Chun-Ming Shih
- 主分类号： H01L21/78
- IPC分类号： H01L21/78 ; H01L21/683 ; H01L23/00 ; H01L23/544
摘要：
A method of manufacturing a semiconductor device includes providing a wafer, grinding a backside of the wafer, disposing a backside film on the backside of the wafer, cutting the wafer to singulate a plurality of dies from the wafer, and forming a mark on the backside film disposed on each of the plurality of dies by a laser operation.
公开/授权文献
- US20150235902A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 公开/授权日：2015-08-20
信息查询
IPC分类:
