发明授权
US09385076B2 Semiconductor device with bump structure on an interconncet structure
有权
具有互连结构的凸起结构的半导体器件
- 专利标题： Semiconductor device with bump structure on an interconncet structure
- 专利标题（中）： 具有互连结构的凸起结构的半导体器件
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申请号： US13313677申请日： 2011-12-07
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公开(公告)号： US09385076B2公开(公告)日： 2016-07-05
- 发明人: Hsien-Wei Chen , Yi-Wen Wu , Wen-Hsiung Lu
- 申请人： Hsien-Wei Chen , Yi-Wen Wu , Wen-Hsiung Lu
- 申请人地址： TW
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW
- 代理机构： Hauptman Ham, LLP
- 主分类号： H01L23/498
- IPC分类号： H01L23/498 ; H01L21/60 ; H01L23/00 ; H01L23/31
摘要：
A semiconductor device includes a post-passivation interconnect (PPI) structure having a landing pad region. A polymer layer is formed on the PPI structure and patterned with a first opening and a second opening to expose portions of the landing pad region. The second opening is a ring-shaped opening surrounding the first opening. A bump structure is formed on the polymer layer to electrically connect the landing pad region through the first opening and the second opening.
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