发明授权
- 专利标题： NPN heterojunction bipolar transistor in CMOS flow
- 专利标题（中）： CMOS流中的NPN异质结双极晶体管
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申请号： US14573006申请日： 2014-12-17
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公开(公告)号： US09385117B2公开(公告)日： 2016-07-05
- 发明人: Manoj Mehrotra , Terry J. Bordelon, Jr. , Deborah J. Riley
- 申请人： Texas Instruments Incorporated
- 申请人地址： US TX Dallas
- 专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; Frank D. Cimino
- 主分类号： H01L21/8248
- IPC分类号： H01L21/8248 ; H01L27/06 ; H01L21/8249 ; H01L29/66 ; H01L29/417 ; H01L21/265 ; H01L29/78 ; H01L29/737 ; H01L29/161 ; H01L29/165
摘要：
An integrated circuit formed on a silicon substrate includes an NMOS transistor with n-channel raised source and drain (NRSD) layers adjacent to a gate of the NMOS transistor, a PMOS transistor with SiGe stressors in the substrate adjacent to a gate of the PMOS transistor, and an NPN heterojunction bipolar transistor (NHBT) with a p-type SiGe base formed in the substrate and an n-type silicon emitter formed on the SiGe base. The SiGe stressors and the SiGe base are formed by silicon-germanium epitaxy. The NRSD layers and the silicon emitter are formed by silicon epitaxy.
公开/授权文献
- US20150187755A1 NPN HETEROJUNCTION BIPOLAR TRANSISTOR IN CMOS FLOW 公开/授权日：2015-07-02
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