Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14434388Application Date: 2012-12-06
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Publication No.: US09385183B2Publication Date: 2016-07-05
- Inventor: Ze Chen , Tsuyoshi Kawakami , Katsumi Nakamura
- Applicant: Ze Chen , Tsuyoshi Kawakami , Katsumi Nakamura
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2012/081661 WO 20121206
- International Announcement: WO2014/087522 WO 20140612
- Main IPC: H01L27/01
- IPC: H01L27/01 ; H01L27/12 ; H01L31/0392 ; H01L29/06 ; H01L29/739 ; H01L29/423

Abstract:
The termination region includes a ring region (LNFLR). A plurality of ring-shaped P-type ring layers are regularly arranged in the ring region (LNFLR). The ring region (LNFLR) is divided into a plurality of units which include the plurality of P-type ring layers respectively. A width of each unit is constant. A total number of P-type impurities in the ring region (LNFLR) is N, the target withstand voltage is BV [V], a width of each unit is SandL [μm], and the number of the plurality of units is num, following relationships are satisfied. N≧(M×BV)γ, M=104 to 105, γ=0.55 to 1.95, SandL×num×Ecri≧2×α×BV, Ecri=2.0 to 3.0×105 [V/cm], α=100 to 101. Widths of the P-type ring layers of the plurality of units linearly decrease toward an outside of the termination region.
Public/Granted literature
- US20150279931A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-10-01
Information query
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