Buried source-drain contact for integrated circuit transistor devices and method of making same

Invention Grant

US09385201B2 Buried source-drain contact for integrated circuit transistor devices and method of making same 有权

Title translation: 集成电路晶体管器件的埋地源极 - 漏极接触及其制作方法

Please log in to see more content

Patent Title: Buried source-drain contact for integrated circuit transistor devices and method of making same
Patent Title (中): 集成电路晶体管器件的埋地源极 - 漏极接触及其制作方法
Application No.: US14297822

Application Date: 2014-06-06
Publication No.: US09385201B2

Publication Date: 2016-07-05
Inventor: Qing Liu , Ruilong Xie , Chun-Chen Yeh , Xiuyu Cai , William J. Taylor
Applicant: STMicroelectronics, Inc. , GlobalFoundries Inc , International Business Machines Corporation
Applicant Address: US TX Coppell KY Grand Cayman US NY Armonk
Assignee: STMICROELECTRONICS, INC.,GLOBALFOUNDRIES INC,INTERNATIONAL BUSINESS MACHINES CORPORATION
Current Assignee: STMICROELECTRONICS, INC.,GLOBALFOUNDRIES INC,INTERNATIONAL BUSINESS MACHINES CORPORATION
Current Assignee Address: US TX Coppell KY Grand Cayman US NY Armonk
Agency: Gardere Wynne Sewell LLP
Main IPC: H01L21/84
IPC: H01L21/84 ; H01L29/417 ; H01L29/78 ; H01L29/66

Buried source-drain contact for integrated circuit transistor devices and method of making same

Abstract:

An integrated circuit transistor is formed on a substrate. A trench in the substrate is at least partially filed with a metal material to form a source (or drain) contact buried in the substrate. The substrate further includes a source (or drain) region in the substrate which is in electrical connection with the source (or drain) contact. The substrate further includes a channel region adjacent to the source (or drain) region. A gate dielectric is provided on top of the channel region and a gate electrode is provided on top of the gate dielectric. The substrate may be of the silicon on insulator (SOI) or bulk type. The buried source (or drain) contact makes electrical connection to a side of the source (or drain) region using a junction provided at a same level of the substrate as the source (or drain) and channel regions.

Abstract(Chinese):

在基板上形成集成电路晶体管。衬底中的沟槽至少部分地与金属材料填充以形成埋在衬底中的源极（或漏极）接触。衬底还包括与源极（或漏极）接触电连接的衬底中的源极（或漏极）区域。衬底还包括与源极（或漏极）区域相邻的沟道区域。栅极电介质设置在沟道区域的顶部，栅电极设置在栅极电介质的顶部。衬底可以是绝缘体上硅（SOI）或体积型。埋入的源极（或漏极）接触器使用与源极（或漏极）和沟道区域在基底的相同水平处提供的接点，使得与源极（或漏极）区域的一侧电连接。

Public/Granted literature

US20150357425A1 BURIED SOURCE-DRAIN CONTACT FOR INTEGRATED CIRCUIT TRANSISTOR DEVICES AND METHOD OF MAKING SAME Public/Granted day:2015-12-10

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84	.....衬底不是半导体的，例如绝缘体