发明授权
- 专利标题： Semiconductor device having a patterned gate dielectric
- 专利标题（中）： 具有图案化栅极电介质的半导体器件
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申请号： US14577044申请日： 2014-12-19
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公开(公告)号： US09385202B2公开(公告)日： 2016-07-05
- 发明人: Marian Kuruc , Juraj Vavro
- 申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 申请人地址： US AZ Phoenix
- 专利权人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人地址： US AZ Phoenix
- 代理商 Kevin B. Jackson
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L29/66 ; H01L29/739 ; H01L29/08 ; H01L29/74 ; H01L29/78
摘要：
In one embodiment, a semiconductor device includes an isolated trench-electrode structure. The semiconductor device is formed using a modified photolithographic process to produce alternating regions of thick and thin dielectric layers that separate the trench electrode from regions of the semiconductor device. The thin dielectric layers can be configured to control the formation channel regions, and the thick dielectric layers can be configured to reduce switching losses.
公开/授权文献
- US20150102403A1 SEMICONDUCTOR DEVICE HAVING A PATTERNED GATE DIELECTRIC 公开/授权日：2015-04-16
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