Invention Grant
- Patent Title: Flexible semiconductor devices and methods of manufacturing the same
- Patent Title (中): 柔性半导体器件及其制造方法
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Application No.: US13937729Application Date: 2013-07-09
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Publication No.: US09385251B2Publication Date: 2016-07-05
- Inventor: Jun-hee Choi , Byoung-lyong Choi , Tae-ho Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2012-0093884 20120827
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0256 ; H01L31/0304 ; H01L33/32 ; H01L33/00 ; H01L31/18 ; H01L31/0352 ; B82Y20/00 ; H01L31/047 ; H01L25/075 ; H01L33/24 ; H01L33/56
Abstract:
A flexible semiconductor device and a method of manufacturing the flexible semiconductor device are provided. The flexible semiconductor device may include at least one vertical semiconductor element that is at least partly embedded in a flexible material layer. The flexible semiconductor device may further include a first electrode formed on a first surface of the flexible material layer and a second electrode formed on a second surface of the flexible material layer. A method of manufacturing a flexible semiconductor device may include separating a flexible material layer, in which the at least one vertical semiconductor element is embedded, from a substrate by weakening or degrading an adhesive force between an underlayer and a buffer layer by using a difference in coefficients of thermal expansion of the underlayer and the buffer layer.
Public/Granted literature
- US20140054599A1 FLEXIBLE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2014-02-27
Information query
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