Invention Grant
- Patent Title: Structure of thermoelectric film
-
Application No.: US14855403Application Date: 2015-09-16
-
Publication No.: US09385291B2Publication Date: 2016-07-05
- Inventor: Ming-Sheng Leu , Tai-Sheng Chen , Chih-Chao Shih
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW101147271A 20121213
- Main IPC: H01L35/10
- IPC: H01L35/10 ; H01L35/18 ; H01L35/16 ; H01L35/22 ; H01L35/14
Abstract:
A structure of a thermoelectric film including a thermoelectric substrate and a pair of first diamond-like carbon (DLC) layers is provided. The first DLC layers are respectively located on two opposite surfaces of the thermoelectric substrate and have electrical conductivity.
Public/Granted literature
- US20160005943A1 STRUCTURE OF THERMOELECTRIC FILM Public/Granted day:2016-01-07
Information query
IPC分类:
