发明授权
US09385699B2 Delay cell, delay locked look circuit, and phase locked loop circuit
有权
延迟单元,延迟锁定外观电路和锁相环电路
- 专利标题: Delay cell, delay locked look circuit, and phase locked loop circuit
- 专利标题(中): 延迟单元,延迟锁定外观电路和锁相环电路
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申请号: US14719406申请日: 2015-05-22
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公开(公告)号: US09385699B2公开(公告)日: 2016-07-05
- 发明人: Dong-Hyuk Lim , Jae-Jin Park , Seung-Hoon Lee
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR10-2014-0094155 20140724
- 主分类号: H03L7/06
- IPC分类号: H03L7/06 ; H03K5/135 ; H03L7/081 ; H03K5/00
摘要:
A delay cell includes a first transistor and a second transistor, at least one of which has a fully depleted silicon-on-insulator (FD-SOI) structure. A first control voltage is applied to the body of the first transistor and a second control voltage is applied to the body of the second transistors in order to adjust the delay time of the delay cell. DLL and PLL circuits includes this type of delay cell.
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