发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US14704768申请日： 2015-05-05
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公开(公告)号： US09386642B2公开(公告)日： 2016-07-05
- 发明人: Godfried Henricus Josephus Notermans , Hans-Martin Ritter
- 申请人： NXP B.V.
- 申请人地址： NL Eindhoven
- 专利权人： NXP B.V.
- 当前专利权人： NXP B.V.
- 当前专利权人地址： NL Eindhoven
- 优先权： EP14168907 20140519
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/861 ; H01L29/732 ; H01L29/74 ; H01L27/02 ; H01L49/02 ; H05B33/08 ; H02M7/217 ; H01L29/87
摘要：
A semiconductor device (300a) comprising: a substrate (302) having a first surface (303); an n-type well (304) extending from the first surface (303) into the substrate (302) and configured to form a depletion region (306) in the substrate (302) around the n-type well (304); an insulating layer (340) extending over the first surface (303) of the substrate (302) from the n-type well (304), the insulating layer (340) configured to form an inversion layer (342) in the substrate (302) extending from the n-type well (304) adjacent to the first surface (303); wherein a p-type floating channel stopper (370a) is provided, configured to extend through the inversion layer (342) to reduce electrical coupling between the n-type well (304) and at least part of the inversion layer (342), and is electrically disconnected from a remainder of the substrate (320) outside of the depletion region (306).
公开/授权文献
- US20150333119A1 SEMICONDUCTOR DEVICE 公开/授权日：2015-11-19
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