Invention Grant
- Patent Title: Device with capacitive security shield
- Patent Title (中): 具有电容安全屏蔽的装置
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Application No.: US14293730Application Date: 2014-06-02
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Publication No.: US09390295B2Publication Date: 2016-07-12
- Inventor: Franciscus Franciscus Widdershoven , Viet Nguyen
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP13174078 20130627
- Main IPC: G06F21/87
- IPC: G06F21/87 ; H01L23/00 ; G06F21/77 ; H04L9/08 ; H04L9/32 ; G09C1/00

Abstract:
The invention provides a semiconductor device comprising with a capacitive security shield structure which uses a set of randomly distributed dielectric or conducting particles formed within a dielectric layer. A set of electrodes can be configured as at least two sets, wherein a first set is used to measure a capacitance characteristic, and a second set is configured as non-measurement set. The electrode configuration can be altered so that multiple measurements can be obtained.
Public/Granted literature
- US20150007353A1 DEVICE WITH CAPACITIVE SECURITY SHIELD Public/Granted day:2015-01-01
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