发明授权
US09390797B2 Driving method of variable resistance element and non-volatile memory device
有权
可变电阻元件和非易失性存储器件的驱动方法
- 专利标题： Driving method of variable resistance element and non-volatile memory device
- 专利标题（中）： 可变电阻元件和非易失性存储器件的驱动方法
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申请号： US13983017申请日： 2012-12-11
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公开(公告)号： US09390797B2公开(公告)日： 2016-07-12
- 发明人: Shunsaku Muraoka , Satoru Mitani , Takeshi Takagi , Koji Katayama
- 申请人： PANASONIC CORPORATION
- 申请人地址： JP Osaka
- 专利权人： PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- 当前专利权人： PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2011-271894 20111213; JP2011-271900 20111213
- 国际申请： PCT/JP2012/007912 WO 20121211
- 国际公布： WO2013/088704 WO 20130620
- 主分类号： G11C11/21
- IPC分类号： G11C11/21 ; G11C13/00
摘要：
A method of driving a variable resistance element comprises: before a first write step is performed, applying an initial voltage pulse of a first polarity to change a resistance value of a metal oxide layer from a resistance value corresponding to an initial state of the metal oxide layer to another resistance value; wherein when the resistance value corresponding to the initial state is R0, the resistance value corresponding to a write state is RL, the resistance value corresponding to an erase state is RH, another resistance value is R2, a maximum value of the current flowing when the initial voltage pulse is applied is IbRL, a maximum value of the current flowing when the write voltage pulse is applied is IRL, and a maximum value of the current flowing when the erase voltage pulse is applied is IRH, R0>RH>R2≧RL, and |IRL|>|IbRL| are satisfied.
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