发明授权
- 专利标题: Integrated circuit having voltage mismatch reduction
- 专利标题(中): 具有电压失配减小的集成电路
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申请号: US14980250申请日: 2015-12-28
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公开(公告)号: US09390816B2公开(公告)日: 2016-07-12
- 发明人: Yu-Hao Hsu , Chia-En Huang , Hektor Huang , Yi-Ching Chang , Chen-Lin Yang , Jung-Ping Yang , Cheng Hung Lee
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW
- 代理机构: Hauptman Ham, LLP
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C29/00 ; G11C11/419 ; G11C11/417
摘要:
An integrated circuit has a first circuit portion on a first level and a second circuit portion on a second level different from the first level. The first circuit portion includes a first cell having a first voltage value at a first node and a second voltage value at a second node. The second circuit portion includes a second cell coupled with the first cell, the second cell being selectively controllable to supply a voltage to the first cell based on an instruction to supply the voltage. The instruction to supply the voltage is based on a determined mismatch between the first voltage value and the second voltage value being greater than a predetermined threshold value.
公开/授权文献
- US20160133342A1 INTEGRATED CIRCUIT HAVING VOLTAGE MISMATCH REDUCTION 公开/授权日:2016-05-12
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