Invention Grant
- Patent Title: Integrated circuit on SOI comprising a transistor protecting from electrostatic discharges
- Patent Title (中): SOI上的集成电路包括保护静电放电的晶体管
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Application No.: US14261757Application Date: 2014-04-25
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Publication No.: US09391057B2Publication Date: 2016-07-12
- Inventor: Claire Fenouillet-Beranger , Pascal Fonteneau
- Applicant: Commissariat a l'energie atomique et aux energies alternatives , STMicroelectronics SA
- Applicant Address: FR Paris FR Montrouge
- Assignee: Commissariat a l'energie atomique et aux energies alternatives,STMicroelectronics SA
- Current Assignee: Commissariat a l'energie atomique et aux energies alternatives,STMicroelectronics SA
- Current Assignee Address: FR Paris FR Montrouge
- Agency: Occhiuti & Rohlicek LLP
- Priority: FR1353811 20130426
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L27/02 ; H01L27/12
Abstract:
An integrated circuit includes first and second electronic components, a buried UTBOX insulating layer, first and second ground planes plumb with the first and second electronic components, first and second wells, first and second biasing electrodes making contact with the first and second wells and with the first and second ground planes, a third electrode making contact with the first well, a first trench isolation separating the first and third electrodes and extending through the buried insulating layer as far as into the first well, and a second trench isolation that isolates the first electrode from the first component, and that does not extend as far as the interface between the first ground plane and the first well.
Public/Granted literature
- US20140319648A1 INTEGRATED CIRCUIT ON SOI COMPRISING A TRANSISTOR PROTECTING FROM ELECTROSTATIC DISCHARGES Public/Granted day:2014-10-30
Information query
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