Invention Grant
- Patent Title: Selective gallium nitride regrowth on (100) silicon
- Patent Title (中): （100）硅上的选择性氮化镓再生长
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Application No.: US14725581Application Date: 2015-05-29
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Publication No.: US09391144B2Publication Date: 2016-07-12
- Inventor: Can Bayram , Cheng-Wei Cheng , Devendra K. Sadana , Kuen-Ting Shiu
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L21/02 ; H01L29/04 ; H01L23/528 ; H01L27/088 ; H01L29/205 ; H01L33/00 ; H01L33/12
Abstract:
A semiconductor structure including a (100) silicon substrate having a plurality openings located within the silicon substrate, wherein each opening exposes a surface of the silicon substrate having a (111) crystal plane. This structure further includes an epitaxial semiconductor material located on an uppermost surface of the (100) silicon substrate, and a gallium nitride material located adjacent to the surface of the silicon substrate having the (111) crystal plane and adjacent a portion of the epitaxial semiconductor material. The structure also includes at least one semiconductor device located upon and within the gallium nitride material and at least one other semiconductor device located upon and within the epitaxial semiconductor material.
Public/Granted literature
- US20150287790A1 SELECTIVE GALLIUM NITRIDE REGROWTH ON (100) SILICON Public/Granted day:2015-10-08
Information query
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