Invention Grant
US09391212B2 Thin film transistor array panel and organic light emitting diode display including the same 有权
薄膜晶体管阵列面板和有机发光二极管显示器包括相同

  • Patent Title: Thin film transistor array panel and organic light emitting diode display including the same
  • Patent Title (中): 薄膜晶体管阵列面板和有机发光二极管显示器包括相同
  • Application No.: US14055253
    Application Date: 2013-10-16
  • Publication No.: US09391212B2
    Publication Date: 2016-07-12
  • Inventor: Chaun-Gi Choi
  • Applicant: SAMSUNG DISPLAY CO., LTD.
  • Applicant Address: KR Samsung-ro, Giheung-Gu, Yongin-si, Gyeonggi-Do
  • Assignee: Samsung Display Co., Ltd.
  • Current Assignee: Samsung Display Co., Ltd.
  • Current Assignee Address: KR Samsung-ro, Giheung-Gu, Yongin-si, Gyeonggi-Do
  • Agent Robert E. Bushnell, Esq.
  • Priority: KR10-2012-0115358 20121017
  • Main IPC: H01L29/786
  • IPC: H01L29/786 H01L27/32 G02F1/1362 H01L27/12
Thin film transistor array panel and organic light emitting diode display including the same
Abstract:
A thin film transistor substrate according to an exemplary embodiment includes: a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the gate electrode; an oxide semiconductor disposed on the gate insulating layer; a first interlayer insulating layer disposed on the oxide semiconductor; a data line disposed on the first interlayer insulating layer; a second interlayer insulating layer disposed on the data line; a source electrode disposed on the second interlayer insulating layer and connected with the oxide semiconductor and the data line through a first contact hole through the second interlayer insulating layer; and a drain electrode disposed on the second interlayer insulating layer and connected with the semiconductor through a second contact hole through the second interlayer insulating layer.
Information query
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L29/00 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件(H01L31/00至H01L47/00,H01L51/05优先;除半导体或其电极之外的零部件入H01L23/00;由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的(H01L29/96优先)
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/78 .....由绝缘栅产生场效应的
H01L29/786 ......薄膜晶体管
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