Invention Grant
US09391231B2 Method for preparing a thin layer of an absorber made of copper, zinc and tin sulfide(s), annealed thin layer and photovoltaic device thus obtained
有权
制备由铜,锌和锡硫化物制成的吸收体的薄层的方法,由此获得的退火薄层和光电器件
- Patent Title: Method for preparing a thin layer of an absorber made of copper, zinc and tin sulfide(s), annealed thin layer and photovoltaic device thus obtained
- Patent Title (中): 制备由铜,锌和锡硫化物制成的吸收体的薄层的方法,由此获得的退火薄层和光电器件
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Application No.: US14758314Application Date: 2013-11-26
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Publication No.: US09391231B2Publication Date: 2016-07-12
- Inventor: Alain Jacob , Gerardo Larramona , Stephane Bourdais , Christophe Chone , Yan Cuccaro
- Applicant: IMRA EUROPE SAS
- Applicant Address: FR Valbonne
- Assignee: IMRA EUROPE SAS
- Current Assignee: IMRA EUROPE SAS
- Current Assignee Address: FR Valbonne
- Agency: Ladas & Parry LLP
- Priority: FR1350741 20130129
- International Application: PCT/FR2013/052851 WO 20131126
- International Announcement: WO2014/118444 WO 20140807
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/18 ; H01L31/0445 ; H01L31/0224 ; H01L21/02 ; H01L31/032 ; H01L31/0392

Abstract:
The present invention provides a thin compact crystallized layer with large grains of an absorber material essentially consisting of Cu, Zn and Sn sulphide(s), preferably CZTS, with less defects and preferably with improved composition homogeneity and/or reduced content of secondary phases, by producing a method for double annealing, in determined atmospheres, of thin layers of particles of a so-called absorber material based on copper, zinc and tin sulphide, preferably on CZTS, deposited on a substrate covered with molybdenum (Mo), said thin annealed absorber layer deposited on said Mo substrate imparting improved photovoltaic performances to a photovoltaic device which comprises them.
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