Invention Grant
US09391240B2 Method for forming transparent electrode and semiconductor device manufactured using same
有权
用于形成透明电极的方法和使用其制造的半导体器件
- Patent Title: Method for forming transparent electrode and semiconductor device manufactured using same
- Patent Title (中): 用于形成透明电极的方法和使用其制造的半导体器件
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Application No.: US14398783Application Date: 2012-09-10
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Publication No.: US09391240B2Publication Date: 2016-07-12
- Inventor: Tae Geun Kim , Hee-Dong Kim
- Applicant: Tae Geun Kim , Hee-Dong Kim
- Applicant Address: KR Seoul
- Assignee: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
- Current Assignee: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
- Current Assignee Address: KR Seoul
- Agency: Kile Park Reed & Houtteman PLLC
- Priority: KR10-2012-0050932 20120514
- International Application: PCT/KR2012/007254 WO 20120910
- International Announcement: WO2013/172511 WO 20131121
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/00 ; H01L33/42 ; H01L29/45 ; H01L33/00 ; H01L51/44

Abstract:
Provided are a method for forming a transparent electrode and a semiconductor device where the transparent electrode is formed by using the method. The method for forming a transparent electrode includes: forming a transparent electrode by using a transparent material of which resistance state is to be changed from a high resistance state into a low resistance state according to an applied electric field; and performing a forming process of changing the resistance state of the transparent electrode into the low resistance state by applying a voltage to the transparent electrode, so that the transparent electrode has conductivity. Accordingly, it is possible to form the transparent electrode having good ohmic characteristic with respect to the semiconductor layer formed above or below the transparent electrode and high transmittance with respect to the light having a short wavelength in a UV wavelength range as well as the light in visible wavelength range.
Public/Granted literature
- US20150137367A1 METHOD FOR FORMING TRANSPARENT ELECTRODE AND SEMICONDUCTOR DEVICE MANUFACTURED USING SAME Public/Granted day:2015-05-21
Information query
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