Invention Grant
US09395622B2 Synthesizing low mask error enhancement factor lithography solutions
有权
合成低掩模误差增强因子光刻解决方案
- Patent Title: Synthesizing low mask error enhancement factor lithography solutions
- Patent Title (中): 合成低掩模误差增强因子光刻解决方案
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Application No.: US14185506Application Date: 2014-02-20
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Publication No.: US09395622B2Publication Date: 2016-07-19
- Inventor: Tadanobu Inoue , David O. Melville , Alan E. Rosenbluth , Masaharu Sakamoto , Kehan Tian
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Yuanmin Cai
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F7/00 ; G03F1/36 ; G03F1/70 ; G03F7/20

Abstract:
In one embodiment, a source mask optimization (SMO) method is provided that includes controlling bright region efficiency during at least one optical domain step. The bright region efficiency being the proportion of the total transmitted light that is transferred to bright areas of a target pattern. The optical domain intermediate solution provided by the at least one optical domain step may then be binarized to obtain an initial spatial domain solution with a controlled MEEF (Mask Error Enhancement Factor). The MEEF is controlled during at least one spatial domain step that optimizes the initial spatial domain solution.
Public/Granted literature
- US20150234970A1 SYNTHESIZING LOW MASK ERROR ENHANCEMENT FACTOR LITHOGRAPHY SOLUTIONS Public/Granted day:2015-08-20
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