Invention Grant
- Patent Title: R-T-B based permanent magnet
- Patent Title (中): R-T-B型永久磁铁
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Application No.: US14261516Application Date: 2014-04-25
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Publication No.: US09396852B2Publication Date: 2016-07-19
- Inventor: Ryuji Hashimoto , Kenichi Suzuki , Kyung-ku Choi
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2013-092236 20130425
- Main IPC: H01F1/057
- IPC: H01F1/057 ; H01F10/12

Abstract:
The present invention provides such a permanent magnet that its magnetic properties will not significantly decrease and it can be prepared at a lower temperature, compared to conventional R-T-B based permanent magnets. In the R-T-B based structure, a stacked structure of R1-T-B based crystal layer and Ce-T-B based crystal layer can be formed by alternatively stacking the R1-T-B based crystal layer and the Ce-T-B based crystal layer. In this way, a high magnetic anisotropy field of the R1-T-B based crystal layer can be maintained while the crystallization temperature can be lowered by the Ce-T-B based crystal layer.
Public/Granted literature
- US20140320245A1 R-T-B BASED PERMANENT MAGNET Public/Granted day:2014-10-30
Information query
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