Invention Grant
- Patent Title: Faradaic energy storage device structures and associated techniques and configurations
- Patent Title (中): 法拉第能量储存装置结构及相关技术和配置
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Application No.: US13871953Application Date: 2013-04-26
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Publication No.: US09396883B2Publication Date: 2016-07-19
- Inventor: Priyanka Pande , Cary L. Pint , Yang Liu , Wei Jin , Charles Holzwarth , Donald Gardner
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H05K7/02
- IPC: H05K7/02 ; H01G11/04 ; H01G11/84 ; H01G11/22

Abstract:
Embodiments of the present disclosure are directed towards Faradaic energy storage device structures and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a substrate having a plurality of holes disposed in a surface of the substrate, the plurality of holes being configured in an array of multiple rows and an active material for Faradaic energy storage disposed in the plurality of holes to substantially fill the plurality of holes. Other embodiments may be described and/or claimed.
Public/Granted literature
- US20140321093A1 FARADAIC ENERGY STORAGE DEVICE STRUCTURES AND ASSOCIATED TECHNIQUES AND CONFIGURATIONS Public/Granted day:2014-10-30
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