Invention Grant
- Patent Title: Gallium ION source and materials therefore
- Patent Title (中): 因此，镓离子源和材料
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Application No.: US13477253Application Date: 2012-05-22
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Publication No.: US09396902B2Publication Date: 2016-07-19
- Inventor: Costel Biloiu , Craig R. Chaney , Neil J. Bassom , Benjamin Colombeau , Dennis P. Rodier
- Applicant: Costel Biloiu , Craig R. Chaney , Neil J. Bassom , Benjamin Colombeau , Dennis P. Rodier
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01J7/24
- IPC: H01J7/24 ; H01J27/20 ; H01J37/02 ; H01J37/08
Abstract:
In one embodiment, a method for generating an ion beam having gallium ions includes providing at least a portion of a gallium compound target in a plasma chamber, the gallium compound target comprising gallium and at least one additional element. The method also includes initiating a plasma in the plasma chamber using at least one gaseous species and providing a source of gaseous etchant species to react with the gallium compound target to form a volatile gallium species.
Public/Granted literature
- US20130313971A1 Gallium ION Source and Materials Therefore Public/Granted day:2013-11-28
Information query
