Invention Grant
- Patent Title: Method for fabricating a substrate and semiconductor structure
- Patent Title (中): 用于制造衬底和半导体结构的方法
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Application No.: US14369594Application Date: 2012-12-21
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Publication No.: US09396987B2Publication Date: 2016-07-19
- Inventor: Oleg Kononchuk
- Applicant: Soitec
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Priority: FR1250162 20120106
- International Application: PCT/IB2012/002793 WO 20121221
- International Announcement: WO2013/102788 WO 20130711
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/762 ; H01L21/18 ; H01L21/265 ; H01L21/683
Abstract:
The invention relates to a method for fabricating a substrate, comprising the steps of providing a donor substrate with at least one free surface, performing an ion implantation at a predetermined depth of the donor substrate to form an in-depth predetermined splitting area inside the donor substrate, and is characterized in providing a layer of an adhesive, in particular an adhesive paste, over the at least one free surface of the donor substrate. The invention further relates to a semiconductor structure comprising a semiconductor layer, and a layer of a ceramic-based and/or a graphite-based and/or a metal-based adhesive provided on one main side of the semiconductor layer.
Public/Granted literature
- US20140374886A1 METHOD FOR FABRICATING A SUBSTRATE AND SEMICONDUCTOR STRUCTURE Public/Granted day:2014-12-25
Information query
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