Invention Grant
- Patent Title: Hybrid high-k first and high-k last replacement gate process
- Patent Title (中): 混合高k第一和高k最后一个替换门过程
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Application No.: US14578732Application Date: 2014-12-22
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Publication No.: US09397100B2Publication Date: 2016-07-19
- Inventor: Hiroaki Niimi , Manoj Mehrotra , Mahalingam Nandakumar
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/027 ; H01L21/28 ; H01L21/3105 ; H01L21/311 ; H01L21/321 ; H01L21/8238 ; H01L29/423 ; H01L29/49 ; H01L29/66 ; H01L29/51 ; H01L27/092 ; H01L21/3213
Abstract:
An integrated circuit and method with a metal gate NMOS transistor with a high-k first gate dielectric on a high quality thermally grown interface dielectric and with a metal gate PMOS transistor with a high-k last gate dielectric on a chemically grown interface dielectric.
Public/Granted literature
- US20150187771A1 HYBRID HIGH-K FIRST AND HIGH-K LAST REPLACEMENT GATE PROCESS Public/Granted day:2015-07-02
Information query
IPC分类:
