Invention Grant
- Patent Title: Manufacturing method of semiconductor structure
- Patent Title (中): 半导体结构的制造方法
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Application No.: US14613231Application Date: 2015-02-03
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Publication No.: US09397138B2Publication Date: 2016-07-19
- Inventor: Chien-Hung Liu
- Applicant: XINTEC INC.
- Applicant Address: TW Taoyuan
- Assignee: XINTEC INC.
- Current Assignee: XINTEC INC.
- Current Assignee Address: TW Taoyuan
- Agency: Liu & Liu
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A manufacturing method of a semiconductor structure includes the following steps. A carrier and a dam element are provided, and the dam element is adhered to the carrier by a temporary bonding layer. The dam element is bonded on the wafer. A first isolation layer, a redistribution layer, a second isolation layer, and a conductive structure are formed on the wafer in sequence. The carrier, the dam element and the wafer are diced to form a semiconductor element. The semiconductor element is disposed on a printed circuit board, such that the conductive structure is electrically connected to the printed circuit board. An adhesion force of the temporary bonding layer is eliminated to remove the carrier. A lens assembly is disposed on the printed circuit board, such that the semiconductor element without the carrier is located in the lens assembly.
Public/Granted literature
- US20150279900A1 MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE Public/Granted day:2015-10-01
Information query
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