Invention Grant
US09397138B2 Manufacturing method of semiconductor structure 有权
半导体结构的制造方法

  • Patent Title: Manufacturing method of semiconductor structure
  • Patent Title (中): 半导体结构的制造方法
  • Application No.: US14613231
    Application Date: 2015-02-03
  • Publication No.: US09397138B2
    Publication Date: 2016-07-19
  • Inventor: Chien-Hung Liu
  • Applicant: XINTEC INC.
  • Applicant Address: TW Taoyuan
  • Assignee: XINTEC INC.
  • Current Assignee: XINTEC INC.
  • Current Assignee Address: TW Taoyuan
  • Agency: Liu & Liu
  • Main IPC: H01L27/146
  • IPC: H01L27/146
Manufacturing method of semiconductor structure
Abstract:
A manufacturing method of a semiconductor structure includes the following steps. A carrier and a dam element are provided, and the dam element is adhered to the carrier by a temporary bonding layer. The dam element is bonded on the wafer. A first isolation layer, a redistribution layer, a second isolation layer, and a conductive structure are formed on the wafer in sequence. The carrier, the dam element and the wafer are diced to form a semiconductor element. The semiconductor element is disposed on a printed circuit board, such that the conductive structure is electrically connected to the printed circuit board. An adhesion force of the temporary bonding layer is eliminated to remove the carrier. A lens assembly is disposed on the printed circuit board, such that the semiconductor element without the carrier is located in the lens assembly.
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