Invention Grant
- Patent Title: Methods of manufacturing semiconductor devices that include performing hydrogen plasma treatment on insulating layer
- Patent Title (中): 包括对绝缘层进行氢等离子体处理的半导体器件的制造方法
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Application No.: US14699091Application Date: 2015-04-29
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Publication No.: US09397196B2Publication Date: 2016-07-19
- Inventor: Hyun-Jun Sim , Jae-Young Park , Sun-Young Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2014-0121751 20140915
- Main IPC: H01L21/428
- IPC: H01L21/428 ; H01L29/66 ; H01L21/306 ; H01L21/762 ; H01L21/28 ; H01L29/51 ; H01L21/02 ; H01L21/268
Abstract:
In a method of manufacturing a semiconductor device, a preliminary gate insulation layer is formed on a substrate, and at least a portion of the substrate serves as a channel region. A hydrogen plasma treatment is performed on the preliminary gate insulation layer to form a gate insulation layer, and the hydrogen plasma treatment supplying a hydrogen-containing gas and an inert gas supply in a chamber via different gas supply parts to form a hydrogen plasma region and an inert gas plasma region in the chamber, respectively. A gate electrode is formed on the gate insulation layer, and impurity regions are formed at upper portions of the substrate adjacent to the gate electrode.
Public/Granted literature
- US20160079395A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES Public/Granted day:2016-03-17
Information query
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