A non-volatile memory device includes an array of memory cells and a plurality of word lines and voltage supply lines. Each memory cell of the array is coupled to one of the word lines. Each of the plurality of voltage supply lines is coupled to a first voltage supply terminal of a subset of memory cells of a plurality of subsets of memory cells of the array. Each subset includes a plurality of memory cells. A voltage switch supplies a respective one of a plurality of aged voltages to each of the plurality of subsets of memory cells in the memory array on respective ones of the voltage supply lines. The aged voltage supplied to a first of the plurality of subsets of memory cells is different than the aged voltage supplied to a second of the plurality of subsets of memory cells.