Invention Grant
- Patent Title: Nitride semiconductor device and nitride semiconductor substrate
- Patent Title (中): 氮化物半导体器件和氮化物半导体衬底
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Application No.: US14742740Application Date: 2015-06-18
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Publication No.: US09401402B2Publication Date: 2016-07-26
- Inventor: Shinichi Kohda , Masahiro Ishida
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2012-283632 20121226
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/20 ; H01L21/02 ; H01L29/10 ; H01L29/778
Abstract:
An object of the present invention is to provide a nitride semiconductor device and a nitride semiconductor substrate in each of which a nitride semiconductor layer formed on a silicon substrate is improved in crystallinity to realize a decrease in on-resistance of a field-effect transistor. The nitride semiconductor device includes a silicon substrate, and a first nitride semiconductor layer formed over the silicon substrate and including a nitride semiconductor, wherein a Si axial direction of the silicon substrate is different from a axial direction of the first nitride semiconductor layer.
Public/Granted literature
- US20150287791A1 NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR SUBSTRATE Public/Granted day:2015-10-08
Information query
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