Invention Grant
US09404197B2 Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
有权
大面积，低缺陷含镓氮化物晶体，制造方法和使用方法
- Patent Title: Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
- Patent Title (中): 大面积，低缺陷含镓氮化物晶体，制造方法和使用方法
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Application No.: US13600191Application Date: 2012-08-30
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Publication No.: US09404197B2Publication Date: 2016-08-02
- Inventor: Mark P. D'Evelyn , Dirk Ehrentraut , Wenkan Jiang , Bradley C. Downey
- Applicant: Mark P. D'Evelyn , Dirk Ehrentraut , Wenkan Jiang , Bradley C. Downey
- Applicant Address: US CA Fremont
- Assignee: Soraa, Inc.
- Current Assignee: Soraa, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Saul Ewing LLP
- Main IPC: C30B29/40
- IPC: C30B29/40 ; C30B25/02
Abstract:
An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators.
Public/Granted literature
- US20140065360A1 Large Area, Low-Defect Gallium-Containing Nitride Crystals, Method of Making, and Method of Use Public/Granted day:2014-03-06
Information query
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